规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
晶闸管, 1200 V, 100 mA, 25 A, 54 A, SOT-227B, 4 引脚
(EN)
NTE ELECTRONICS
双极性晶体管, NPN, 50V, TO-251
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, 40V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 63 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 40 hFE
(EN)
NEXPERIA
单管二极管 齐纳, 15 V, 400 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
MULTICOMP
二极管, 标准恢复, 2A, 400V, DO-214AC-2
(EN)
INFINEON
场效应管, MOSFET, N沟道, 400V, 14A, TO-204AA
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 83 A, 1.85 V, 335 W, 1.2 kV, Module
(EN)
ROHM
双极晶体管阵列, NPN, 50 V, 300 mW, 100 mA, 250 hFE, SOT-457
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 26 A, 3.5 V, 200 W, 1.7 kV, TO-247AD, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
二极管 桥式整流, 单相, 1.2 kV, 40 A, SOT-227B, 1.15 V, 4 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
(EN)
NEXPERIA
双极晶体管阵列, 双NPN, 45 V, 220 mW, 100 mA, 200 hFE, SOT-363
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -50V, 130mA, SOT-23
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 35 hFE
(EN)
VISHAY
二极管, 肖特基, 1A, 60V, DO-214AC-2, 整卷
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 6.2 V, 3 W, DO-213AA, 5 %, 2 引脚, 150 °C
(EN)NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE
(EN)
