规格：工作温度最高值 150°C,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.09 ohm, 4.5 V, 250 mV
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.05 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)
MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)
BROADCOM LIMITED
晶体管 双极-射频, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 hFE
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, SOT-89
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343
(EN)BROADCOM LIMITED
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
(EN)BROADCOM LIMITED
晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343
(EN)
