规格：工作温度最高值 150°C,
NEXPERIA
单晶体管 双极, NPN, 20 V, 260 MHz, 250 mW, 30 mA, 65 hFE
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 20 V, 275 MHz, 250 mW, 25 mA, 85 hFE
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 20 V, 450 MHz, 250 mW, 25 mA, 85 hFE
(EN)
INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 hFE
(EN)INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE
(EN)NXP
晶体管, JFET, JFET, 200 μA, 1.5 mA, 2 V, SOT-23, JFET
(EN)NXP
晶体管 双极-射频, PNP, 12 V, 5 GHz, 300 mW, -35 mA, 50 hFE
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 200V, 250mA TO-92
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 mA, 200 V, 4.5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, TO-92
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 0.350W, TO-92
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0022 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 45 A, 150 V, 0.0131 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2 V
(EN)
