规格：工作温度最高值 150°C,
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
功率场效应管, MOSFET, P沟道, -20V, -60A, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, 双路N沟道, 25V, SON-8
(EN)
TEXAS INSTRUMENTS
功率场效应管, N沟道, 同步降压, NEXFET, 30V, 40A, SON-8, 整卷
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
MULTICOMP
单晶体管 双极, PNP, -45 V, 50 W, 10 A, 60 hFE
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 80 V, 100 mA, 1.2 V, 3 ns, 500 mA
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 80 V, 100 mA, 1.2 V, 3 ns, 500 mA
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管, 快速恢复型, 200mA, 800V, SMINI2-F5-B
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 双共阳极, 80 V, 100 mA, 1.2 V, 10 ns, 340 mA
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 300 V, 100 mA, 1.2 V, 60 ns, 500 mA
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管, 超快恢复型, 65mA, 80V, SOT-23
(EN)PANASONIC ELECTRONIC COMPONENTS
二极管, 超快恢复型, 100mA, 80V, SOT-23
(EN)PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 150mA, 80V, S
(EN)PANASONIC ELECTRONIC COMPONENTS
DIODE, 200mA, 300V, SOT-23
(EN)
