规格：工作温度最高值 150°C,
DIODES INC.
单晶体管 双极, PNP, -40 V, 145 MHz, 2 W, -3 A, 190 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 225 mA, 100 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 40 V, 150 MHz, 1 W, 1 A, 300 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 150 V, 100 MHz, 1 W, 1 A, 100 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, -400 V, 50 MHz, 1 W, -200 mA, 100 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, -40 V, 150 MHz, 1 W, -1 A, 160 hFE
(EN)DIODES INC.
单晶体管 双极, 达林顿, NPN, 120 V, 150 MHz, 1 W, 1 A, 100000 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 500 mA, 35 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 45 V, 150 MHz, 1 W, 2 A, 150 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -2 A, 150 hFE
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 150 A, 1.75 V, 790 W, 1.2 kV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 200 V, 35 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52 A, 200 V, 0.041 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 8.5 mohm, 20 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 80 V, 0.056 ohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 80 V, 0.056 ohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
(EN)
