规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -3.7A, -20V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 双共阴极, 100 V, 16 A, 950 mV, 35 ns, 200 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 双共阴极, 150 V, 16 A, 950 mV, 35 ns, 200 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 双共阴极, 400 V, 16 A, 1.3 V, 50 ns, 200 A
(EN)ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 双共阴极, 600 V, 16 A, 1.5 V, 50 ns, 200 A
(EN)
STMICROELECTRONICS
标准恢复二极管, 单, 60 V, 20 A, 505 mV, 180 A
(EN)ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 单, 600 V, 16 A, 1.5 V, 50 ns, 250 A
(EN)
VISHAY
快速/超快二极管, 单, 200 V, 16 A, 975 mV, 35 ns, 250 A
(EN)VISHAY
快速/超快功率二极管, 单, 600 V, 16 A, 1.5 V, 50 ns, 250 A
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 1.4 kA, 1.75 V, 9.55 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, 双NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, 双NPN, 310 A, 1.95 V, 1.25 kW, 1.7 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, 双NPN, 450 A, 1.75 V, 1.6 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, 双NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 5.1 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 5.1 kW, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 单, 200 V, 20 A, 1.15 V, 45 ns, 200 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 300 mW, 500 mA, 300 hFE, SC-70
(EN)ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, PNP, 30 V, 300 mW, 500 mA, 100 hFE, SC-70
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管
(EN)ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 300 mW, 200 mA, 40 hFE, SC-70
(EN)ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, PNP, 40 V, 300 mW, 200 mA, 100 hFE, SC-70
(EN)
