规格：工作温度最高值 150°C,
DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
(EN)
ROHM
二极管 小信号, 80 V, 25 mA, 900 mV, 4 ns, 80 mA
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.034 ohm, 10 V, 3 V
(EN)
ROHM
双极晶体管阵列, NPN, PNP, 50 V, 300 mW, 150 mA, 120 hFE, SC-74A
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 15 A, 1.85 V, 130 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 115 W, 600 V, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 200 V, 32 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.14 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.8 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
(EN)
