规格：工作温度最高值 150°C,
BROADCOM LIMITED
二极管, 射频/PIN, 衰减器, 共阴极, 3 ohm, 100 V, SOT-23, 3引脚, 0.35 pF
(EN)BROADCOM LIMITED
二极管, 射频/PIN, 开关, 单, 0.6 ohm, 50 V, SOT-23, 3引脚, 0.8 pF
(EN)BROADCOM LIMITED
二极管, 射频/PIN, 开关, 双系列, 0.6 ohm, 50 V, SOT-23, 3引脚, 0.8 pF
(EN)BROADCOM LIMITED
二极管, 射频/PIN, 双系列, 1.5 ohm, 200 V, SOT-23, 3引脚, 0.3 pF
(EN)
BROADCOM LIMITED
二极管, 射频/PIN, 限制器, 单, 0.6 ohm, 50 V, SOT-323, 3引脚, 1.2 pF
(EN)
INFINEON
单晶体管, IGBT, 3 A, 2.8 V, 62.5 W, 1.2 kV, TO-263, 3 引脚
(EN)
ROHM
双极晶体管阵列, 双路, PNP, 50 V, 300 mW, -150 mA, 120 hFE, SOT-457
(EN)ROHM
双极晶体管阵列, 双路, NPN, PNP, 50 V, 300 mW, 150 mA, 120 hFE, SOT-457
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 299 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 399 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 650 V, 0.47 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 650 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.9 A, 900 V, 0.62 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)
