规格：工作温度最高值 150°C,
ROHM
单晶体管 双极, PNP, 40 V, 140 MHz, 200 mW, 100 mA, 100 hFE
(EN)ROHM
单晶体管 双极, NPN, 80 V, 200 MHz, 200 mW, 100 mA, 10000 hFE
(EN)
VISHAY
晶体管, 场效应管, JFET, N-通道, 2MA, TO-236AB
(EN)VISHAY
晶体管, 场效应管, JFET, N-通道, 15MA, TO-236AB
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 40 W, 1.5 A, 20 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 75 W, 4 A, 15 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 150 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.065 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 1 W, 750 mA, 10 hFE
(EN)
