规格：工作温度最高值 150°C,
STMICROELECTRONICS
单晶体管 双极, PNP, 100 V, 2 W, 5 A, 1000 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 2 W, 8 A, 15000 hFE
(EN)
STMICROELECTRONICS
达林顿双极晶体管
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 90 W, 15 A, 1000 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)MULTICOMP
单晶体管 双极, 通用, PNP, -60 V, 3 MHz, 40 W, -3 A, 25 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 2 W, 3 A, 25 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 3 MHz, 80 W, 10 A, 100 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, -100 V, 65 W, 6 A, 75 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 10 MHz, 40 W, 1 A, 150 hFE
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 190 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
小信号肖特基二极管, 单, 100 V, 200 mA, 1 V, 750 mA, 150 °C
(EN)
VISHAY
晶体管, MOSFET, P沟道, -580 mA, -20 V, 420 mohm, -4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -385 mA, -30 V, 1.25 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 6 A, 30 V, 24 mohm, 10 V, 2.5 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 75 mohm, 10 V, 2.3 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)TOSHIBA
晶体管, MOSFET, 功率, P沟道, -12 A, -40 V, 0.0061 ohm, -10 V, -800 mV
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.041 ohm, 10 V, 5 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.041 ohm, 10 V, 5 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
