规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 180 A, 25 V, 0.0012 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
(EN)
NEXPERIA
单管二极管 齐纳, 5.6 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0018 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道+肖特基, 160 A, 25 V, 0.0014 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 25V, 30A, PQFN-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 5 A, 1000 hFE
(EN)
ON SEMICONDUCTOR
晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, JFET, JFET, 30 V, -20 mA, -135 mA, 10 V, TO-236, JFET
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18.3 A, -60 V, 0.048 ohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 45 V, 200 mW, 100 mA, 420 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.017 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
二极管, 肖特基, 5A, 30V, SOD-128-2
(EN)
ON SEMICONDUCTOR
Small Signal Schottky Diode, Single, 70 V, 70 mA, 730 mV, 150 °C
(EN)
DIODES INC.
单管二极管 齐纳, 3.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
二极管 小信号, 单, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
(EN)
