规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)
NEXPERIA
单管二极管 齐纳, 8.2 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 100 MHz, 2 W, 1.5 A, 40 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 100 MHz, 350 mW, 500 mA, 100 hFE
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)
NEXPERIA
单管二极管 齐纳, 36 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 13 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
达林顿双极性晶体管
(EN)ON SEMICONDUCTOR
达林顿晶体管, PNP, -100V, D-PAK
(EN)
NEXPERIA
二极管阵列 齐纳, 18 V, 300 mW, -55 °C, 150 °C, SOT-23
(EN)
ON SEMICONDUCTOR
齐纳二极管, 500mW, 8.2V, SOD-123
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 1W, 12V, DO-214AC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 20 V, 0.0044 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 28A, SOIC
(EN)
ROHM
标准恢复二极管, 玻璃钝化, 单, 400 V, 1 A, 1.1 V, 30 A
(EN)
VISHAY
肖特基整流器, 双共阴极, 60 V, 10 A, TO-263AC, 3 引脚, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0038 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
(EN)
VISHAY
MOSFET Transistor
(EN)
ON SEMICONDUCTOR
齐纳二极管, 500mW, 8.2V, SOD-123
(EN)DIODES INC.
单晶体管 双极, NPN, 100 V, 150 MHz, 500 mW, 1 A, 100 hFE
(EN)
