规格：工作温度最高值 175°C,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 40 A, 1200 V, 348 W, 1.2 kV, TO-3PN, 3 引脚
(EN)
DIODES INC.
单管二极管 齐纳, 1N47系列, 24 V, 1 W, DO-41, 5 %, 2 引脚, 175 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 4.1 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 双共阴极, 600 V, 30 A, 2.1 V, 45 ns, 325 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 74A, D2-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
NTE ELECTRONICS
整流桥
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.4 V, 394 W, 1.35 kV, TO-247, 3 引脚
(EN)
VISHAY
DIODE, STANDARD RECOVERY, 1A, 200V, DO-213AB-2
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 150 V, 6.2 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V
(EN)
VISHAY
肖特基整流器
(EN)
VISHAY
单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 2 引脚, 175 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-247AB, 3 引脚
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)INFINEON
单晶体管, IGBT, 47 A, 1.65 V, 206 W, 600 V, TO-263AB, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)
VISHAY
快速/超快功率二极管, 单, 600 V, 30 A, 2 V, 45 ns, 200 A
(EN)
VISHAY
超快整流二极管, 共阴极 16A, D2PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 30V, 93A TO-263AB
(EN)
INFINEON
标准功率二极管, 单, 650 V, 15 A, 1.35 V, 71 ns, 120 A
(EN)
