规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, 65 A, 1.6 V, 250 W, 600 V, TO-247AD, 3 引脚
(EN)
STMICROELECTRONICS
肖特基整流器, 双共阴极, 150 V, 10 A, TO-220FPAB, 3 引脚, 1 V
(EN)
VISHAY
快速/超快功率二极管, 超快, 单, 600 V, 15 A, 2.45 V, 36 ns, 160 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 8.2 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)
IXYS RF
晶体管, 射频FET, 1 kV, 24 A, 1.8 kW, 30 MHz, DE-475
(EN)
STMICROELECTRONICS
标准恢复二极管, 场效应整流器, 单, 100 V, 30 A, 950 mV, 250 A
(EN)
INFINEON
单晶体管, IGBT, 95 A, 1.65 V, 330 W, 600 V, TO-247AC, 3 引脚
(EN)
ON SEMICONDUCTOR
快速/超快功率二极管, 单, 800 V, 8 A, 1.8 V, 100 ns, 100 A
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)
STMICROELECTRONICS
标准功率二极管, 1.2 kV, 30 A, 单, 1.3 V, 300 A
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)
INFINEON
标准功率二极管, 单, 600 V, 120 A, 2 V, 220 A
(EN)VISHAY
晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
快速/超快功率二极管, 单, 800 V, 4 A, 1.85 V, 100 ns, 70 A
(EN)
SOLID STATE
齐纳二极管, 50W, 14V, DO-5
(EN)DIODES INC.
单管二极管 齐纳, 1N47系列, 15 V, 1 W, DO-41, 5 %, 2 引脚, 175 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 0.0056 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)STMICROELECTRONICS
标准功率二极管, 1.2 kV, 60 A, 单, 1.3 V, 500 A
(EN)
STMICROELECTRONICS
肖特基整流器, 40 V, 1 A, 单, SOD-123FL, 2 引脚, 500 mV
(EN)INFINEON
单晶体管, IGBT, 65 A, 1.6 V, 250 W, 600 V, TO-247AC, 3 引脚
(EN)ON SEMICONDUCTOR
肖特基整流器, 45 V, 30 A, 双共阴极, TO-247AC, 3 引脚, 620 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
整流二极管, 30A 超快恢复
(EN)
