规格：工作温度最高值 175°C,
IXYS SEMICONDUCTOR
肖特基整流器, 双共阴极, 180 V, 15 A, TO-247AD, 3 引脚, 720 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 4.9 mohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 28 A, 2.2 V, 167 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.75 V, 595 W, 650 V, TO-247, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 612 A, 1.75 V, 1.2 kV, Module
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
SOLID STATE
齐纳二极管, Vz: 10V
(EN)IXYS SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 200 V, 45 A, 860 mV, 450 A, 175 °C
(EN)INFINEON
单晶体管, IGBT, 通用, 60 A, 2.05 V, 187 W, 600 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
小信号肖特基二极管, 双共阴极, 100 V, 60 A, 930 mV, 450 A, 175 °C
(EN)
INFINEON
单晶体管, IGBT, 4 A, 2.1 V, 75 W, 600 V, TO-252, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
快速恢复二极管, 0.5A 2KV 轴向引线
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 双共阴极, 400 V, 4 A, 2.2 V, 28 ns, 100 A
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)
STMICROELECTRONICS
标准功率二极管, 1.2 kV, 30 A, 单, 1.3 V, 300 A
(EN)
