规格：工作温度最高值 175°C,
SEMIKRON
晶体管, IGBT阵列&模块, 双NPN, 81 A, 1.85 V, 1.2 kV, SEMITRANS 2
(EN)
VISHAY
快速/超快二极管, 单, 200 V, 10 A, 850 mV, 35 ns, 100 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 22 mohm, 10 V, 1.7 V
(EN)
SOLID STATE
齐纳二极管, Vz: 12V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 2 V
(EN)
INFINEON
单晶体管, IGBT, 80 A, 1.85 V, 305 W, 600 V, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 36 A, 1.65 V, 206 W, 600 V, TO-220, 3 引脚
(EN)
NTE ELECTRONICS
单齐纳二极管, 双端, 33V Vz
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
SOLID STATE
单管二极管 齐纳, 36 V, 10 W, DO-4, 5 %, 2 引脚, 175 °C
(EN)INFINEON
单晶体管, IGBT, 90 A, 1.7 V, 325 W, 650 V, TO-247AC, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 104A, D2-PAK
(EN)
VISHAY
快速/超快二极管, 单, 200 V, 15 A, 1.05 V, 35 ns, 200 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 75 V, 7.5 mohm, 10 V, 4 V
(EN)
IXYS RF
晶体管, 射频FET, 500 V, 4.5 A, 200 W, 100 MHz, DE-150
(EN)
INFINEON
单晶体管, IGBT, 75 A, 1.7 V, 454 W, 600 V, TO-247AC, 3 引脚
ON SEMICONDUCTOR
电源整流二极管, 肖特基, 30A
(EN)STMICROELECTRONICS
快速/超快二极管, 双共阴极, 600 V, 100 A, 1.65 V, 75 ns, 360 A
(EN)SOLID STATE
齐纳二极管, Vz: 18V
(EN)
IXYS SEMICONDUCTOR
快速/超快二极管, 外延二极管(FRED), 双共阴极, 200 V, 30 A, 1.06 V, 35 ns, 300 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)
