规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 60 V, 3 A, 单, DO-214AB, 2 引脚, 740 mV
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.092 ohm, 5 V, 1.68 V
(EN)
VISHAY
齐纳二极管, 500mW, 4V, DO-35
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 5.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 9 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
标准二极管, 1A, 1KV, 403D
(EN)VISHAY
快速/超快功率二极管, 单, 600 V, 60 A, 1.68 V, 45 ns, 600 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0128 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
(EN)STMICROELECTRONICS
快速/超快二极管, 双共阴极, 300 V, 30 A, 1.6 V, 25 ns, 150 A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)IXYS SEMICONDUCTOR
肖特基整流器, 双共阴极, 150 V, 25 A, TO-247AD, 3 引脚, 680 mV
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 28 A, 1.85 V, 155 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.006 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 75 A, 2 V, 428 W, 600 V, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V
(EN)
