规格：工作温度最高值 175°C,
ON SEMICONDUCTOR
SCHOTTKY RECTIFIER, 3A, 100V, DO-201AD
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
快速/超快功率二极管, 双系列, 600 V, 10 A, 1.5 V, 35 ns, 130 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
VISHAY
肖特基整流器, 单, 35 V, 10 A, TO-220AC, 2 引脚, 570 mV
(EN)INFINEON
单晶体管, IGBT, 48 A, 1.65 V, 250 W, 600 V, TO-220, 3 引脚
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 200 V, 4 A, 单, 890 mV, 35 ns, 100 A
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 75A, TO-220AB-3
(EN)
SOLID STATE
快速/超快二极管, 100 V, 2.5 A, 单, 875 mV, 25 ns, 35 A
(EN)
IXYS RF
晶体管, 射频FET, 500 V, 44 A, 1.8 kW, 30 MHz, DE-475
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 1 kV, 60 A, 1.3 V, 49 ns, 400 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 106 A, 75 V, 0.0059 ohm, 10 V, 2 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 100 A, 3.1 V, 750 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 130A, D2-PAK
(EN)
NTE ELECTRONICS
整流桥
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 115 A, 1.85 V, 1.2 kV, Module
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 150 V, 8 A, TO-220AB, 3 引脚, 920 mV
(EN)
STMICROELECTRONICS
肖特基整流器, 单, 150 V, 2 A, DO-15, 2 引脚, 820 mV
(EN)
VISHAY
单管二极管 齐纳, MELF, 3.3 V, 1 W, DO-213AB, 5 %, 2 引脚, 175 °C
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 100 V, 15 A, TO-247, 3 引脚, 800 mV
(EN)INFINEON
单晶体管, IGBT, N通道, 140 A, 1.7 V, 455 W, 650 V, TO-247AC, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
小信号二极管, 100V, 200mA, DO-35
(EN)
