规格：工作温度最高值 175°C,
ON SEMICONDUCTOR
快速/超快二极管, 单, 150 V, 8 A, 975 mV, 35 ns, 100 A
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 140 A, 40 V, 0.0019 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 27A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0061 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 2.5 V
(EN)
INFINEON
MOSFET, N-CH, 75V, 197A, TO-263CB-7
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 80V, 40A, TO-252-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 55 V, 0.0165 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 40 V, 0.0178 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 120A, TO-220AB-3
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 hFE
(EN)
NXP
射频宽带晶体管, NPN, 5V, 5GHZ, 3-SOT-23
(EN)
ON SEMICONDUCTOR
标准二极管, 1A, 800V, 59-10
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 48A TO-220AB
(EN)VISHAY
肖特基整流二极管
(EN)
