规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 16A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D-PAK
(EN)
INTERNATIONAL RECTIFIER
(EN)
STMICROELECTRONICS
芯片, 超快速整流器
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.012 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00326 ohm, 10 V, 1.73 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)
INFINEON
标准功率二极管, 单, 650 V, 8 A, 2.2 V, 23 ns, 60 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 80 A, 2.3 V, 428 W, 1.2 kV, TO-247, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 55V, 49A, TO-220AB
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
标准功率二极管, 单, 650 V, 15 A, 1.6 V, 30 ns, 100 A
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
NEXPERIA
单晶体管 双极, PNP, -30 V, 165 MHz, 600 mW, -3 A, 100 hFE
(EN)
