规格：工作温度最高值 175°C,
NTE ELECTRONICS
标准二极管, 750MA, 600V, DO-26
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 313 A, 1.8 V, 1.2 kV, Module
(EN)
STMICROELECTRONICS
肖特基整流器, 单, 100 V, 1 A, DO-214AA, 2 引脚, 770 mV
(EN)STMICROELECTRONICS
标准功率二极管, 单, 600 V, 1 A, 1.3 V, 80 ns, 20 A
(EN)
VISHAY
齐纳二极管, 6.2V, 1.3W
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 100 MHz, 5 W, 1 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 140 A, 1.7 V, 450 W, 650 V, TO-247AC, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK
STMICROELECTRONICS
快速/超快二极管, 单, 600 V, 1 A, 1 V, 25 ns, 20 A
(EN)
VISHAY
快速二极管, 1A, 200V, DO-214AA, 整卷
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 数字音频 150V, 17A, TO-220AB
(EN)
ON SEMICONDUCTOR
肖特基整流器, 双共阴极, 40 V, 6 A, TO-252, 4 引脚, 700 mV
(EN)VISHAY
二极管, 快速, 1A, 600V, DO-214AA, 整卷
(EN)
VISHAY
齐纳二极管, 500MW, 12V, SOD-80, 整卷
(EN)
VISHAY
齐纳二极管, 12V, 500mW
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 1.7 V
(EN)
MULTICOMP
齐纳二极管, 500mW, 5.6V, DO-204AH
(EN)
MULTICOMP
齐纳二极管, 500mW, 7.5V, DO-204AH
(EN)MULTICOMP
齐纳二极管, 500mW, 20V, DO-204AH
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
