规格：工作温度最高值 175°C,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)
LITTELFUSE
IGBT Single Transistor, 20 A, 125 W, 440 V, TO-252, 3 Pins
(EN)
DIODES INC.
双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
(EN)
VISHAY
标准恢复二极管, 单, 100 V, 1 A, 1.1 V, 30 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
肖特基整流器, 双共阴极, 60 V, 6 A, TO-252, 3 引脚, 900 mV
(EN)
STMICROELECTRONICS
标准恢复二极管, 单, 200 V, 30 A, 1.15 V, 50 ns, 300 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 120 MHz, 600 mW, -3 A, 80 hFE
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 15 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 80 V, 0.001 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.004 ohm, 10 V, 3.7 V
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 100 V, 1 A, 单, 1.1 V, 25 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 115 A, 150 V, 0.005 ohm, 10 V, 3 V
(EN)NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 60 V, 160 MHz, 600 mW, 3 A, 75 hFE
(EN)
VISHAY
标准恢复二极管, 400 V, 150 A, 单, 1.3 V, 93 ns, 1.5 kA
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 24 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)INFINEON
晶体管, MOSFET, P沟道, -14 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 80 V, 0.014 ohm, 10 V, 3 V
(EN)
