规格：工作温度最高值 175°C,
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)
VISHAY
快速/超快二极管, 单, 200 V, 8 A, 975 mV, 35 ns, 100 A
(EN)
STMICROELECTRONICS
标准恢复二极管, 单, 100 V, 40 A, 675 mV, 440 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.002 ohm, 10 V, 3 V
(EN)VISHAY
快速/超快二极管, 双共阴极, 200 V, 30 A, 1.05 V, 30 ns, 200 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 100 V, 0.0033 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
Fast / Ultrafast Power Diode, 600 V, 20 A, Dual Common Cathode, 2.08 V, 55 ns, 120 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0019 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 Pins
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 135 V, 0.0047 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.00055 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00163 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
肖特基整流器, 双共阴极, 100 V, 20 A, TO-263, 3 引脚, 950 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 汽车, N沟道, 80 A, 75 V, 0.0048 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 单, 600 V, 15 A, 2.2 V, 40 ns, 200 A
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 20 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 120 V, 800 mW, SMD, 2 引脚, 175 °C
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 8.2 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)
