规格：工作温度最高值 175°C,
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 51 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)
VISHAY
肖特基整流器, 双共阴极, 150 V, 30 A, TO-247, 3 引脚, 670 mV
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 18 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 250 V, 0.085 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
快速/超快功率二极管, 单, 600 V, 2 A, 1.45 V, 75 ns, 35 A
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 150 V, 0.0045 ohm, 10 V, 4 V
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 75 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 60 V, 3 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 单, 600 V, 30 A, 2.4 V, 45 ns, 325 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 0.011 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0021 ohm, 10 V, 3.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.16 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
肖特基整流器, 60 V, 20 A, 双共阴极, TO-263, 3 引脚, 950 mV
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 43 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 75 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 195A, TO-262-3
(EN)
STMICROELECTRONICS
标准功率二极管, 单, 1.2 kV, 20 A, 1.3 V, 57 ns, 210 A
(EN)
STMICROELECTRONICS
快速/超快功率二极管, 单, 600 V, 8 A, 2.9 V, 45 ns, 80 A
(EN)INFINEON
单晶体管, IGBT, 通用, 20 A, 2.05 V, 110 W, 600 V, TO-220, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
