规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 25 V, 4.8 ohm, 10 V, 1.85 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
标准功率二极管, 单, 600 V, 15 A, 2.2 V, 40 ns, 200 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 单, 600 V, 15 A, 2.2 V, 40 ns, 200 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 单, 1.2 kV, 18 A, 3.3 V, 70 ns, 200 A
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 180 A, 150 V, 11 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 100 V, 11 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 150 V, 10 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 150 A, 150 V, 13 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 引脚
(EN)
IXYS RF
晶体管, 射频FET, 500 V, 10 A, 470 W, 175 MHz, DE-275
(EN)
MULTICOMP
二极管 小信号, 开关, 单, 100 V, 150 mA, 1 V, 4 ns, 2 A
(EN)
