规格：工作温度最高值 175°C,
STMICROELECTRONICS
标准恢复二极管, 单, 600 V, 3 A, 1.9 V, 50 ns, 30 A
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 200 V, 4 A, 1.05 V, 30 ns, 70 A
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 200 V, 4 A, 1.05 V, 30 ns, 70 A
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 600 V, 60 A, 1.85 V, 60 ns, 400 A
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 200 V, 8 A, 1.05 V, 30 ns, 70 A
(EN)
STMICROELECTRONICS
快速/超快功率二极管, 单, 1 kV, 8 A, 1.3 V, 47 ns, 60 A
(EN)
STMICROELECTRONICS
标准恢复二极管, 单, 300 V, 8 A, 1.3 V, 50 ns, 280 A
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 600 V, 30 A, 2.9 V, 25 ns, 80 A
(EN)
STMICROELECTRONICS
快速/超快功率二极管, 单, 600 V, 8 A, 2.9 V, 45 ns, 80 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 280 A, 24 V, 0.0008 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 100 V, 9 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 75 V, 3.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 20 V, 8.5 mohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 96 A, 60 V, 0.0061 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0028 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)
