规格：工作温度最高值 175°C,
VISHAY
标准二极管, 3A, 400V, DO-201AD
(EN)
STMICROELECTRONICS
标准恢复二极管, 双共阴极, 600 V, 15 A, 2.2 V, 50 ns, 80 A
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 50 V, 1 A, 单, 1.1 V, 25 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 60 V, 16 mohm, 10 V, 4 V
(EN)
VISHAY
标准恢复二极管, 单, 200 V, 1.5 A, 1.15 V, 30 A
(EN)
ON SEMICONDUCTOR
肖特基整流二极管, 3A, 60V, D-PAK
(EN)
NEXPERIA
肖特基整流器, 60 V, 10 A, 单, SOT-1289, 3 引脚, 560 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 80 V, 8300 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR
标准功率二极管, 800 V, 4 A, 单, 1.85 V, 100 ns, 70 A
(EN)
STMICROELECTRONICS
快速/超快二极管, 200 V, 1.5 A, 单, 1.2 V, 30 ns, 60 A
(EN)
VISHAY
快速/超快功率二极管, AEC-Q101, 600 V, 6 A, 单, 1.3 V, 60 ns, 120 A
(EN)
VISHAY
齐纳二极管, VZ:5.6V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 15 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
(EN)
VISHAY
齐纳二极管, 500mW, 9.1V, DO-35
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V
(EN)
VISHAY
标准功率二极管, 600 V, 1 A, 单, 1.1 V, 3 μs, 30 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)VISHAY
齐纳二极管, Vz:22V
(EN)
