规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 75 V, 28 mohm, 5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 0.0086 ohm, 10 V, 4 V
(EN)
VISHAY
单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 175 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)
STMICROELECTRONICS
标准功率二极管, 600 V, 8 A, 单, 1.3 V, 105 ns, 10 A
(EN)
ON SEMICONDUCTOR
肖特基整流器, 45 V, 10 A, 单, TO-220AC, 2 引脚, 570 mV
(EN)
VISHAY
快速/超快二极管, 200 V, 10 A, 双共阴极, 980 mV, 25 ns, 130 A
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 60 V, 153 mohm, 5 V, 1.7 V
(EN)
STMICROELECTRONICS
肖特基整流器, 100 V, 2 A, 单, SOD-123FL, 2 引脚, 960 mV
(EN)
STMICROELECTRONICS
快速/超快二极管, 200 V, 1.5 A, 单, 1 V, 30 ns, 60 A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
快速/超快二极管, 600 V, 3 A, 单, 1.7 V, 35 ns, 45 A
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 100 mohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 42 A, 150 V, 0.0372 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 100 V, 2 A, 单, SMA, 2 引脚, 790 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 14 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
MULTICOMP
二极管, 超快恢复型, 150mA, 75V, DO-204AH-2
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 30 V, 0.0036 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
肖特基整流器, 单, 60 V, 1 A, SOD-123W, 2 引脚, 530 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 软恢复, 单, 600 V, 30 A, 2.1 V, 40 ns, 325 A
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, -4 V
(EN)
