规格：工作温度最高值 175°C,
VISHAY
齐纳二极管, Vz:16V
(EN)
NEXPERIA
单晶体管 双极, NPN, 100 V, 170 MHz, 1.3 W, 6 A, 140 hFE
(EN)
NXP
晶体管 双极-射频, NPN, 5 V, 5 GHz, 32 mW, 6.5 mA, 80 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 378 A, 40 V, 0.00057 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 低VF, 单, 30 V, 2 A, DO-214AA, 2 引脚, 500 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
(EN)
VISHAY
肖特基整流器, 45 V, 15 A, 单, TO-263, 2 引脚, 620 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0009 ohm, 10 V, 2 V
(EN)
NTE ELECTRONICS
小信号二极管
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 60 V, 0.0054 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 200 V, 2 A, 950 mV, 20 ns, 50 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 34 A, 40 V, 0.0084 ohm, 10 V, 2.4 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 49 A, 100 V, 0.0168 ohm, 10 V, 1.7 V
(EN)
VISHAY
单管二极管 齐纳, 6.8 V, 1 W, DO-213AB, 5 %, 2 引脚, 175 °C
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 400 V, 1 A, 单, 1.1 V, 25 A
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00089 ohm, 10 V, 1.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
(EN)
