规格：工作温度最高值 175°C,
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 12 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
标准恢复二极管, 200 V, 16 A, 双共阳极, 975 mV, 85 ns, 100 A
(EN)
SOLID STATE
标准功率二极管, 单, 600 V, 6 A, 900 mV, 400 A
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 153 MHz, 1.35 W, 6 A, 60 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0077 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 150 V, 0.101 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 30 A, 1.35 V, 150 W, 390 V, TO-263, 3 引脚
(EN)
VISHAY
单管二极管 齐纳, 18 V, 1 W, DO-213AB, 5 %, 2 引脚, 175 °C
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.054 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 90 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 15 A, 80 V, 0.059 ohm, 1.7 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 14 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0105 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 71 A, 30 V, 0.0055 ohm, 10 V, 1.48 V
(EN)
MICRO COMMERCIAL COMPONENTS
二极管, 标准恢复型, 1A, 200V, SOD-123FL
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
单管二极管 齐纳, 2.4 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)
ON SEMICONDUCTOR
标准功率二极管, 单, 1 kV, 4 A, 1.85 V, 100 ns, 70 A
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V
(EN)
