规格：工作温度最高值 175°C,
VISHAY
齐纳二极管, Vz:3V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 80V, 39A, DPAK
(EN)
ON SEMICONDUCTOR
肖特基整流二极管, 4A, 60V, 403A
(EN)
VISHAY
标准功率二极管, 单, 600 V, 15 A, 1.05 V, 120 ns, 180 A
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)
VISHAY
单管二极管 齐纳, 16 V, 1.3 W, DO-204, 5 %, 2 引脚, 175 °C
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00079 ohm, 10 V, 1.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 100 V, 0.0165 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.044 ohm, 4.5 V, 2 V
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 110 MHz, 25 W, -3 A, 35 hFE
(EN)
NXP
晶体管, PNP, -60V, -3A, SOT-669-5
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.013 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0085 ohm, 10 V, 1.64 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 185 A, 40 V, 0.0014 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 56 A, 100 V, 21 mohm, 10 V, 4 V
(EN)
VISHAY
肖特基整流器, 单, 100 V, 8 A, TO-220AC, 2 引脚, 720 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 150 mohm, -10 V, -5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 11.8 A, 80 V, 0.0824 ohm, 10 V, 1.7 V
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 36 V, 800 mW, SMD, 2 引脚, 175 °C
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0072 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 单, 400 V, 2 A, 1.3 V, 65 ns, 35 A
(EN)
VISHAY
标准功率二极管, 单, 3 kV, 250 mA, 3 V, 2 μs, 15 A
(EN)
