规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 94 A, 200 V, 23 mohm, 10 V, 5 V
(EN)
VISHAY
快速/超快二极管, 双共阴极, 200 V, 30 A, 1.05 V, 35 ns, 200 A
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 13 V, 800 mW, SMD, 2 引脚, 175 °C
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 200 V, 15 A, 单, 1.05 V, 35 ns, 200 A
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 44A, D2-PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 64A TO-220AB
INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 150 V, 70 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
VISHAY
单管二极管 齐纳, 3.3 V, 500 mW, SOD-80 (迷你MELF), 2 %, 2 引脚, 175 °C
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 33A, D2-PAK
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 85 MHz, 1.5 W, -10 A, 30 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31.8 A, 30 V, 0.0205 ohm, 4.5 V, 1.62 V
(EN)
STMICROELECTRONICS
快速/超快功率二极管, 600 V, 2 A, 单, 1.3 V, 85 ns, 35 A
(EN)
VISHAY
齐纳二极管, 500mW, 6.8V, SOD-80
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
标准功率二极管, 1 kV, 4 A, 单, 1.85 V, 75 ns, 70 A
(EN)
VISHAY
肖特基整流器, 5A, 100V, DO-201AD
VISHAY
标准功率二极管, 单, 600 V, 15 A, 1.05 V, 120 ns, 180 A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.101 ohm, -10 V, -3 V
(EN)
VISHAY
快速/超快二极管, 双共阴极, 200 V, 8 A, 950 mV, 25 ns, 130 A
(EN)
ON SEMICONDUCTOR
标准二极管, 1A, 1KV, 59-10
(EN)
