规格：工作温度最高值 175°C,
STMICROELECTRONICS
肖特基整流器, 双共阴极, 150 V, 40 A, TO-263, 3 引脚, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 4.5 mohm, 10 V, 4 V
(EN)
NEXPERIA
肖特基整流器, AEC-Q101, 8 A, 单, SOT-1289, 3 引脚, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 单, 100 V, 1 A, DO-41, 2 引脚, 790 mV
(EN)STMICROELECTRONICS
快速/超快功率二极管, 单, 1.2 kV, 8 A, 2 V, 100 ns, 80 A
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
SOLID STATE
标准二极管, 6A, 50V, 轴向引线
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 61 A, 60 V, 0.0102 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
肖特基整流二极管, 30A, 100V D2PAK
(EN)
VISHAY
单管二极管 齐纳, 5.1 V, 1.3 W, DO-204AL, 2 引脚, 175 °C
(EN)
NTE ELECTRONICS
标准二极管, 1A, 1KV, DO-41
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 56 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)
VISHAY
肖特基整流器, 100 V, 20 A, 双共阴极, TO-247AC, 3 引脚, 490 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
