规格：工作温度最高值 175°C,
VISHAY
快速/超快功率二极管, 超快, 单, 600 V, 8 A, 3.4 V, 24 ns, 80 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
(EN)
VISHAY
STANDARD DIODE, 1.5A, 1.65KV, DO-204AC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45.6 A, 150 V, 33 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.0073 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
快速/超快二极管, 200 V, 16 A, 双共阴极, 975 mV, 35 ns, 100 A
(EN)
SOLID STATE
单管二极管 齐纳, 30 V, 10 W, DO-4, 5 %, 2 引脚, 175 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 单, 1.2 kV, 15 A, 3.2 V, 75 ns, 200 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.009 ohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
快速/超快功率二极管, 单, 600 V, 8 A, 2.9 V, 45 ns, 80 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 小信号, 单, 150 V, 200 mA, 1.1 V, 50 ns, 4 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
小信号二极管
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -36 A, -150 V, 90 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0015 ohm, 4.5 V, 2.5 V
(EN)
VISHAY
标准功率二极管, 单, 800 V, 1 A, 830 mV, 30 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.012 ohm, 10 V, 4 V
(EN)
NEXPERIA
二极管 小信号, 单, 250 V, 250 mA, 1.25 V, 50 ns, 9 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
标准二极管, 250MA, 200V, DO-35
(EN)
