规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 单, 200 V, 8 A, 1.3 V, 35 ns, 100 A
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-247AC
INFINEON
晶体管, MOSFET, N沟道, 57 A, 100 V, 25 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 400 V, 60 A, 830 mV, 50 ns, 600 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 10 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
标准功率二极管, 单, 600 V, 80 A, 1.6 V, 85 ns, 800 A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.7 V, 349 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 6.2 mohm, 10 V, 3 V
(EN)VISHAY
快速/超快二极管, 双共阴极, 300 V, 60 A, 1.25 V, 39 ns, 300 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 52 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3460 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR
肖特基整流器, 45 V, 15 A, 双共阴极, TO-263, 3 引脚, 840 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 55A, TO-220AB
VISHAY
单管二极管 齐纳, 2.7 V, 1.3 W, DO-41 (DO-204AL), 2 %, 2 引脚, 175 °C
(EN)
