规格：工作温度最高值 175°C,
ON SEMICONDUCTOR
Fast / Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 4.7 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 50 V, 6 A, 双共阴极, TO-252, 4 引脚, 900 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
(EN)
NTE ELECTRONICS
标准二极管, 1A, 1.5KV, DO-41
(EN)
VISHAY
标准恢复二极管, 400 V, 80 A, 单, 1.3 V, 87 ns, 800 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
(EN)INFINEON
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-252, 3 引脚
(EN)ON SEMICONDUCTOR
肖特基整流器, 80 V, 20 A, 双共阴极, TO-220, 3 引脚, 950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150W, TO-220
(EN)
VISHAY
标准恢复二极管, TVS AEC-Q101, 1.8 V, 700 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.044 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 20 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 60 V, 0.0011 ohm, 10 V, 2.9 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.13 ohm, 10 V, 1 V
(EN)
VISHAY
标准功率二极管, AEC-Q101, 单, 600 V, 2 A, 1 V, 4 μs, 50 A
(EN)
INFINEON
场效应管, MOSFET, N沟道, 140W, TO-262
(EN)
