规格：工作温度最高值 175°C,
VISHAY
晶体管, MOSFET, N沟道, 17 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00117 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
快速/超快功率二极管, 600 V, 15 A, 单, 1.5 V, 60 ns, 150 A
(EN)ON SEMICONDUCTOR
快速/超快功率二极管, 600 V, 8 A, 单, 1.5 V, 60 ns, 100 A
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0017 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)
VISHAY
快速/超快二极管, 单, 200 V, 1 A, 1 V, 50 ns, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
Schottky Rectifier, 45 V, 30 A, Dual Common Cathode, TO-220, 3 Pins, 730 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 150 A, 1.6 V, 375 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 140 A, 100 V, 0.0056 ohm, 10 V, 4 V
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 39 V, 800 mW, SMD, 2 引脚, 175 °C
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 105 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V
(EN)
IXYS SEMICONDUCTOR
快速/超快功率二极管, 单, 1.2 kV, 60 A, 2.66 V, 40 ns, 500 A
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 单, 50 V, 4 A, 890 mV, 35 ns, 125 A
(EN)
