规格：工作温度最高值 175°C,
STMICROELECTRONICS
肖特基整流器, 100 V, 8 A, TO-263, 3 引脚, 710 mV
(EN)
STMICROELECTRONICS
快速/超快二极管, 单, 200 V, 20 A, 1.1 V, 16 ns, 175 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 20 V, 4 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 75 V, 12.5 mohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 250 V, 0.019 ohm, 10 V, 3 V
(EN)
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 9.1 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0168 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
快速/超快二极管, 100 V, 4 A, 单, 890 mV, 35 ns, 125 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 12.5A, SOIC
(EN)
STMICROELECTRONICS
小信号肖特基二极管, 双共阴极, 80 V, 30 A, 965 mV, 220 A, 175 °C
(EN)
VISHAY
标准恢复二极管, 单, 200 V, 1 A, 1.1 V, 3 μs, 30 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 1.2 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 24 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.08 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 69 A, 100 V, 0.0116 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 60 V, 40 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 80 A, 1.65 V, 429 W, 1.35 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.35 V, 230 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.42 V, 395 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V
(EN)
