规格：功耗 Pd 125W,
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 400 V, 125 W, 15 A, 300 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 60 V, 0.0049 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 3 MHz, 125 W, -25 A, 15 hFE
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -100 V, 125 W, -10 A, 500 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, -100 V, 3 MHz, 125 W, -25 A, 15 hFE
(EN)DIODES INC.
功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 5.5 ohm, 10 V, 4 V
(EN)DIODES INC.
功率场效应管, MOSFET, N沟道, 2.5 A, 950 V, 5.5 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)SEMELAB
单晶体管 双极, PNP, 100 V, 125 W, 16 A, 3000 hFE
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)
