规格：功耗 Pd 125W,
WOLFSPEED
功率场效应管, MOSFET, N沟道, 19 A, 1.2 kV, 0.16 ohm, 20 V, 2.6 V
(EN)
INFINEON
单晶体管, IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 55 V, 13 mohm, 5 V, 2.5 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V
(EN)SEMELAB
晶体管, MOSFET, P沟道, -8 A, -160 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 40 V, 700 μohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 40 V, 700 μohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 200 V, 0.027 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.05 ohm, 10 V, 3 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V
(EN)
