VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 50 A, 1.9 V, 179 W, 1.2 kV, TO-247AC, 3 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V

VISHAY

场效应管, MOSFET, N沟道, 500V, 19A, TO220AB-3

VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V

ROHM

功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V

INFINEON

晶体管, IGBT, 1200V, 50A

VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3

ROHM

功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 500V, 19A, TO-263-3

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V

VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 500V, 19A, TO247AC-3

INFINEON

单晶体管, IGBT, 40 A, 2.4 V, 179 W, 600 V, TO-247, 3 引脚