规格：功耗 Pd 156W,
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0029 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0022 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, N沟道, 303 A, 25 V, 0.0007 ohm, 10 V, 1.6 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 35 A, 2.2 V, 156 W, 600 V, TO-262, 3 引脚
(EN)
INFINEON
晶体管, IGBT, 1.8V, 22A, TO-262-3
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.8 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)
