规格：功耗 Pd 2.1W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 120 mohm, 5 V, 1.68 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.06 ohm, 4.5 V, 1.2 V
(EN)
WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1.5 A, 17 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1.5 A, 17 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, 肖特基二极管, P沟道, -3.2 A, -20 V, 0.064 ohm, -4.5 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 2A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
P CHANNEL MOSFET, -60V, 5.7A, POWER 33
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 800 V, 15.5 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)
