规格：功耗 Pd 2.1W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)INFINEON
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 38 A, 20 V, 0.0005 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 120 mohm, 5 V, 1.68 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 115 MHz, 2.1 W, 6 A, 450 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
(EN)
