规格：功耗 Pd 2.1W,
VISHAY
晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.1 A, 20 V, 0.065 ohm, 4.5 V, 1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 35 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.9 A, 60 V, 105 mohm, 10 V, 1 V
(EN)
