规格：功耗 Pd 192W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 30 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 47 A, 1.65 V, 192 W, 600 V, TO-247AC, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
静电防护保护二极管, 12V, SOD-523
(EN)
VISHAY
静电保护二极管, 5V
(EN)VISHAY
二极管, 静电保护, 5.0V, 16A, LLP1006-2L
(EN)
