VISHAY

单管二极管 齐纳, 18 V, 2.3 W, DO-219AB, 2 引脚, 150 °C

NEXPERIA

双极晶体管阵列, NPN, PNP, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V

VISHAY

单管二极管 齐纳, 12 V, 2.3 W, DO-219AB, 2 引脚, 175 °C

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV

NEXPERIA

双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC

NEXPERIA

双极晶体管阵列, PNP, -30 V, 2.3 W, -4.8 A, 200 hFE, SOIC

NEXPERIA

双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC

NEXPERIA

双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 500 hFE, SOIC

VISHAY

晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, N沟道, 12V, 6A, 1206