规格：功耗 Pd 33W,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 1.65 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 33 W, 12 A, 1000 hFE
(EN)
STMICROELECTRONICS
晶体管, IGBT阵列&模块, N沟道, 10 A, 600 V, 33 W, SDIP
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.05 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.9 A, 900 V, 0.62 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 53 A, 40 V, 0.0055 ohm, 10 V, 1.7 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 60 V, 0.037 ohm, 10 V, 2 V
(EN)
