规格：功耗 Pd 35W,
NTE ELECTRONICS
晶体管, NPN 高电压
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 480 mohm, 10 V, 3.75 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 6.3 A, 1.95 V, 35 W, 600 V, TO-252AA, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V
(EN)
NTE ELECTRONICS
双极性晶体管, 2A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 250 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.14 ohm, 10 V, 4.5 V
(EN)
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)
NTE ELECTRONICS
晶体管, NPN 高电压
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 100V, 0.092OHM, 16A, MLP-8
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)STMICROELECTRONICS
单晶体管, IGBT, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 引脚
(EN)
