规格：功耗 Pd 1.4W,
ON SEMICONDUCTOR
单晶体管 双极, PNP, 25 V, 65 MHz, 1.4 W, 5 A, 3 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 10 V, 2.2 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.7 A, 20 V, 68 mohm, 1 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3.1 A, -20 V, 0.06 ohm, -1 V, 1 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 130 MHz, 1.4 W, 3 A, 80 hFE
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 7.6 A, 12 V, 0.014 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 12A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.1A, MICROFET 2X2
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 100 V, 40 MHz, 1.4 W, 4 A, 40 hFE
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 40 V, 100 MHz, 1.4 W, 3 A, 280 hFE
(EN)
